http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980028359-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1996-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980028359-A |
| titleOfInvention | Manufacturing method of fine pattern of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a fine pattern of a semiconductor device, wherein a HNlDS film is applied to a surface of a photoresist pattern, which is formed on an etched layer and used as an etching mask, to be silicided and exposed to oxygen or ozone plasma to become a hard mask. Since the oxide layer was formed and the etching layer was etched using the photoresist pattern formed on the surface of the oxide layer as an etching mask, the etching selectivity with the etching layer of the photoresist pattern was increased, thereby reducing the thickness of the photoresist pattern. The margin is increased and the collapse and loss of the photoresist pattern can be prevented, thereby improving process yield and reliability of device operation. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190054963-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101108613-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100463237-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11061333-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020000351-A |
| priorityDate | 1996-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.