http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980027151-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1996-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980027151-A |
| titleOfInvention | Contact hole formation method of semiconductor device |
| abstract | The present invention relates to a method for forming a contact hole in a semiconductor device, comprising: forming a planarization layer on an upper surface of a semiconductor substrate, forming a photoresist pattern on the planarization layer using a contact mask, and then using the photoresist pattern as a mask. Isotropically etched to form an undercut, and using the photoresist pattern as a mask to form a groove by first inclining the planarization layer, and using the photoresist pattern as a mask, second planarization of the planarization layer to form a groove. After forming the contact hole to expose and overetching the photoresist pattern as a mask, and then removing the photoresist pattern to form a contact hole having a sidewall with a gentle inclination to improve the step coverage ratio of the contact buried material and contact buried material Increase the process margin during the patterning process to facilitate the subsequent process In order to improve the characteristics and reliability of the semiconductor device and to improve the yield and productivity of the semiconductor device, high integration of other semiconductor devices is possible. |
| priorityDate | 1996-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.