http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980026823-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1996-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980026823-A |
| titleOfInvention | Capacitor of Semiconductor Device and Manufacturing Method Thereof |
| abstract | The present invention relates to a capacitor of a semiconductor device and a method of manufacturing the same. In particular, the present invention relates to a method for preventing lateral oxidation of an oxygen diffusion barrier layer of a capacitor. A method of forming an L-type spacer as the spacer and a method of improving the step coverage of the spacer are disclosed. Also disclosed is a method of filling an insulating layer between storage nodes after forming a spacer and before forming a dielectric layer and an upper electrode.n n n According to this method, it is possible to prevent the contact failure by solving the disadvantage that the side of the oxygen diffusion preventing layer is oxidized, so that the capacitor can be stably operated even at high integration. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100342820-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100866709-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100424192-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100688054-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100420121-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100440072-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100423906-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100465832-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100334391-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100680463-B1 |
| priorityDate | 1996-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.