patent/KR-19980026079-A

Predicate	Object
filingDate	1996-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate	1998-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	KR-19980026079-A
titleOfInvention	Contact hole formation method of semiconductor device
abstract	A method for forming a contact hole in a semiconductor device is described. This is a fluoro-based gas in which trifluoro methane (CHF 3 ) and tetrafluoro carbon (CF 4 ) are mixed in a process of forming a photoresist pattern on an etched layer and in a magnetic enhanced reactive ion etching (MERIE) facility. And etching the etching target layer. Therefore, according to the present invention, contact holes having a fine size can be formed without performing a complicated process such as forming a polysilicon layer.
priorityDate	1996-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6393 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6373 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419546198 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457280508 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523906 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419555680 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6517

Total number of triples: 14.