| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
1997-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1998-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-19980024671-A |
| titleOfInvention |
Manufacturing method of high capacitance accumulation node structure |
| abstract |
The present invention provides a high capacitance (pattern) by patterning the hybrid resist 12 to provide both negative tones 16 and positive tons 18 in the exposed areas 14. capacitance). After removal of the positive tones 18, the substrate 12 is etched using the unexposed hybrid resist 12 and the negative tone regions 16 as masks. This provides a trench 22 in the substrate 12 having a protrusion 24 centered and protruding upwards. A capacitor 26 is then fabricated by covering the sidewalls of the trench 22 and protrusion 24 with a dielectric 28 and filling the trench with a conductive material 30 such as polysilicon. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100433847-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100328824-B1 |
| priorityDate |
1996-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |