http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980018503-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate | 1997-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980018503-A |
| titleOfInvention | Thin film manufacturing method and thin film manufacturing device |
| abstract | The thin film manufacturing method has an electron density of 10 10 under a first process of producing a small thin film containing titanium nitride as a main component on a substrate, and a processing gas in which nitrogen, hydrogen, and ammonia are selectively mixed. It consists of a 2nd process of generating a high density plasma of more than / cm < 3> , and reforming a small thin film with the activated process gas. The second process is performed following the first process. This thin film manufacturing method vaporizes the raw material gas which consists of tetrakis dialkylamino titanium, heats it in a gaseous state, and chemically reacts, and manufactures the thin film which has a titanium nitride as a main component on a board | substrate. |
| priorityDate | 1996-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.