http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980018440-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1997-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980018440-A |
| titleOfInvention | Method and apparatus for stress control by fluorination of anhydrous silicic acid thin film |
| abstract | An apparatus and a method for controlling the internal stress of a deposited silicon oxide thin film are disclosed. In one embodiment, the present invention involves mixing a predetermined amount of halogen element into a thin film to obtain a final thin film having a desired stress level. In another embodiment, the method according to the present invention comprises the step of varying the stress level of the deposited silicon oxide film under high-concentration plasma conditions by mixing a predetermined amount of fluorine into the thin film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200017343-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100785373-B1 |
| priorityDate | 1996-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.