| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4991
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2022-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2023-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2023-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102492383-B1 |
| titleOfInvention |
Mosfet device structure with air-gaps in spacer and methods for forming the same |
| abstract |
Transistor devices and methods of making the same are disclosed. A transistor device includes one or more air gaps in one or more sidewall spacers. One or more air gaps may be located adjacent to the gate and/or over a source or drain region of the device. Various embodiments may include different combinations of air gaps formed in one or both sidewall spacers. Various embodiments may include an air gap formed in one or both sidewall spacers adjacent to the gate and/or over the source or drain regions of the device. Formation of the air gap may reduce unwanted parasitic and/or fringing capacitance. |
| priorityDate |
2020-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |