Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-7858 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2020-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2023-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2023-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-102486683-B1 |
titleOfInvention |
Method for forming long channel back-side power rail device |
abstract |
A method of forming a semiconductor transistor device is disclosed. The method includes forming a finned channel structure over a substrate, and forming a first source/drain epitaxial structure and a second source/drain epitaxial structure on both ends of the fin structure. The method further includes forming a metal gate structure surrounding the fin structure. The method further includes flipping the substrate and partially removing the backside capped trench while leaving a lower portion of the substrate along the upper sidewalls of the first source/drain epitaxial structure and the second source/drain epitaxial structure as a protective spacer. form The method further includes forming a backside dielectric cap in the backside capping trench. |
priorityDate |
2020-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |