| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 |
| filingDate |
2015-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102482373-B1 |
| titleOfInvention |
Magnetoresistive random access device and method of manufacturing the same |
| abstract |
The magnetoresistive memory device includes a lower electrode formed on a substrate, a magnetic tunnel junction (MTJ) structure formed on the lower electrode, a metal oxide pattern formed on the magnetic tunnel junction (MTJ) structure, and at least some sidewalls of the metal oxide pattern. It may include a conductive pattern formed on the metal oxide pattern and having an irregular thickness along a sidewall of the metal oxide pattern when viewed from above, and an upper electrode formed on the metal oxide pattern and the conductive pattern. |
| priorityDate |
2015-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |