http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102481312-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2103-54 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-53 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-364 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-042 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-364 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K103-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-53 |
| filingDate | 2018-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102481312-B1 |
| titleOfInvention | Method for producing a technical mask |
| abstract | The invention relates to a method for manufacturing a technical mask 1 from a plate-shaped substrate 2, for example made of glass, sapphire or silicon. At least one hole in the mask 1 is made using laser induced deep etching, and the substrate 2 is transparent to at least the laser wavelength used in the laser induced deep etching. To this end, the substrate 2 is modulated along predefined overhead lines 4 , by means of pulses of the laser, in particular to separate the closed contours 3 . Local interruptions of the overhead lines 4 in the form of connecting webs, so-called break-out tabs, ensure that the contours 3 to be separated are first still connected to the plate-shaped substrate 2 after treatment with an etchant. guarantee that The plate-shaped substrate 2 pretreated in this way is treated in a next step with an etchant such as, for example, hydrofluoric acid (HF) or potassium hydroxide (KOH), whereby the unmodulated areas of the substrate are homogeneously And isotropically etched. The modulated areas react anisotropically with respect to the untreated areas of the substrate 2, so in the treated areas there are primarily oriented recesses, in which the material of the substrate 2 dissolves completely. formed until |
| priorityDate | 2017-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.