http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102480798-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67303 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate | 2020-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102480798-B1 |
| titleOfInvention | Substrate processing method and substrate processing apparatus |
| abstract | The present invention provides a technique capable of preventing the stoppage of etching due to the generation of RuO 2 and improving the surface roughness of a ruthenium film caused by etching. A plurality of cycles including a step of reducing an oxide of the ruthenium film by supplying a hydrogen-containing gas to a substrate including a ruthenium film, and a step of oxidizing and etching the ruthenium film by supplying an oxygen-containing gas to the substrate. Substrate processing method, repeated several times. |
| priorityDate | 2019-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.