| abstract |
A semiconductor device according to an embodiment of the present invention includes a first substrate, first gate electrodes spaced apart from each other and stacked along a direction perpendicular to a top surface of the first substrate, penetrating the first gate electrodes and perpendicular to the first substrate. A first circuit comprising first channels that extend upwardly, first bit lines connected to the first channels, and first bonding pads disposed over the first bit lines to be electrically connected to the first bit lines. It is connected to the first substrate structure on the substrate structure and the first substrate structure, and penetrates the second substrate, the second gate electrodes spaced apart from each other and stacked along the direction perpendicular to the upper surface of the second substrate, and the second gate electrodes. Second channels extending vertically on a second substrate, second bit lines connected to the second channels, and a second junction disposed over the second bit lines to be electrically connected to the second bit lines. A second substrate structure including pads, the first substrate structure and the second substrate structure are bonded and connected by first and second bonding pads, and the first bit lines connect the first and second bonding pads. are electrically connected to the second bit lines, respectively. |