| abstract |
A lower substrate, a first insulating layer on the lower substrate, and a lower element having a TSV pad on the first insulating layer, an intermediate substrate, a second insulating layer on the intermediate substrate, and a first TSV bump on the second insulating layer An upper element having an intermediate element, an upper substrate, a third insulating layer on the upper substrate, and an upper element having a second TSV bump on the third insulating layer, and the upper substrate, the third insulating layer, the second insulating layer, and A multi-layered device including a TSV structure that penetrates the intermediate substrate and is electrically connected to the first TSV bump, the second TSV bump, and the TSV pad is described. The intermediate device may have a first insulating TSV spacer between the intermediate substrate and a lower portion of the TSV structure. The upper device may have a second insulating TSV spacer between the upper substrate and an upper portion of the TSV structure. The second insulating layer and the third insulating layer may directly contact side surfaces of the TSV structure. |