http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102466884-B1

Outgoing Links

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2203-10
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-0155
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0735
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-0155
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-015
filingDate 2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102466884-B1
titleOfInvention Field Effect Adjustable Epsilon-Near-Zero Absorber
abstract The present disclosure provides systems and methods for tunable ENZ materials that can change their ability to absorb radiant energy. The tunable ENZ material can act as a broadband absorber that advantageously uses a stack of ultrathin conductive layers with permittivities in the epsilon-near-zero (ENZ) order at different wavelengths. The conductive materials may include at least partially transparent conductive oxide or transition metal nitride layers with different electron concentrations, and thus different ENZ frequencies for a broad range of energy absorption capabilities. The layer(s) can be directly tuned to various frequencies to achieve high levels of absorption at deep sub-wavelength ENZ thicknesses. An applied electrical bias can create an electron accumulation/depletion region in the ENZ semiconductor device, controlling the plasma frequency and thus the high level of absorption within the device. Also, for a stack of layers, the carrier concentration may vary from layer to layer.
priorityDate 2017-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 20.