http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102466880-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-02 |
| filingDate | 2015-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102466880-B1 |
| titleOfInvention | Magnetic memory device |
| abstract | A magnetic memory device may include an interlayer insulating film on a substrate, a landing pad penetrating the interlayer insulating film, first and second magnetic tunnel junction patterns disposed on the interlayer insulating film and spaced apart from the landing pad in a plan view, and the second magnetic tunnel junction pattern. and a connection structure electrically connecting an upper surface of the tunnel junction pattern and the landing pad. In plan view, the distance between the landing pad and the first magnetic tunnel junction pattern is greater than the distance between the first and second magnetic tunnel junction patterns, and the distance between the landing pad and the second magnetic tunnel junction pattern is greater than the spacing between the first and second magnetic tunnel junction patterns. |
| priorityDate | 2015-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 75.