| abstract |
Provided are a resin composition and a method for forming a resist pattern that are excellent in pattern shape improvement, residue defect prevention, and watermark defect prevention properties. Resin A which contains a sulfonic acid group-containing structural unit in a content ratio exceeding 5 mol%, and the mass of fluorine atoms contained per unit mass is 30 mass% or less, and a resin in which the mass of fluorine atoms contained per unit mass is greater than that of Resin A A resin composition containing C and a solvent, wherein the content of the resin A is smaller than the content of the resin C. |