http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102453245-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2017-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102453245-B1 |
| titleOfInvention | Substrate processing apparatus, method of manufacturing semiconductor device, computer program and process vessel |
| abstract | The present invention provides a technique for improving the in-plane film thickness uniformity of a film formed on a wafer. According to one aspect of the present invention, there is provided a processing chamber comprising: a processing chamber configured to process a substrate; a processing gas nozzle configured to supply a processing gas into the processing chamber; an inert gas nozzle for supplying an inert gas into the processing chamber; and an exhaust pipe for exhausting the atmosphere in the processing chamber, wherein an angle formed by a first straight line connecting the processing gas nozzle and a central portion of the substrate and a second straight line connecting the inert gas nozzle and a central portion of the substrate is θ. In this case, there is provided a substrate processing apparatus in which the processing gas nozzle and the inert gas nozzle are provided around the substrate so that the θ becomes a value determined according to the surface area of the substrate. |
| priorityDate | 2017-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.