http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102450165-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18377 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18366 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3054 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate | 2020-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102450165-B1 |
| titleOfInvention | Method of fabricating thin-film vertical cavity surface emitting laser |
| abstract | According to one aspect according to the technical spirit of the present disclosure, forming a phosphide-based sacrificial layer on a growth substrate, and first arsenide doped with impurities of a first conductivity type on the sacrificial layer forming a stacked structure in which a mirror-based mirror layer, an active layer, and a second arsenide-based mirror layer doped with an impurity of a second conductivity type different from the first conductivity type are sequentially stacked; Disclosed is a method for manufacturing a thin film type vertical resonance surface emitting laser, comprising the steps of attaching, and separating a laminate structure and a first carrier from a growth substrate. |
| priorityDate | 2020-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.