http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102435735-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04 |
| filingDate | 2020-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102435735-B1 |
| titleOfInvention | Etchant composition with high selectivity for nitride film |
| abstract | The present invention relates to an etchant composition having excellent selectivity for a nitride film, and to be more detailed, it includes an inorganic acid solvent, a silane inorganic acid salt, and an additive, but by using a novel compound as the silane inorganic acid salt, the nitride film The present invention relates to an etchant composition having excellent etch selectivity and capable of manufacturing a semiconductor device in an environmentally friendly and economical manner. |
| priorityDate | 2020-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.