http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102433272-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0267 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2012-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102433272-B1 |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device including transistors having the same polarity consumes less power and can prevent a decrease in the amplitude of an output potential. A semiconductor device includes a first wiring having a first potential, a second wiring having a second potential, a third wiring having a third potential, a first transistor and a second transistor having the same polarity, and a first transistor and a second transistor It is selected whether to apply the first potential to the gates or the third potential to the gates of the first transistor and the second transistor, and one potential is applied to the drain terminals of the first transistor and the second transistor. and a plurality of third transistors for selecting whether to apply. The source terminal of the first transistor is connected to the second wiring, and the source terminal of the second transistor is connected to the third wiring. |
| priorityDate | 2011-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.