http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102431921-B1

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filingDate 2020-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102431921-B1
titleOfInvention Oxide thin-film transistor based on oxygen plasma treatment, and fabrication method thereof
abstract The present invention relates to a method of manufacturing an oxide thin film transistor, comprising: forming an insulating layer on a substrate having a function of a gate lower electrode; forming an active layer on the insulating layer; and oxygen plasma treatment process on the surface of the active layer and forming an upper electrode on the active layer after the oxygen plasma treatment process is performed. According to the present invention, there is an effect that the electrical performance characteristics of the thin film interface can be improved by manufacturing the oxide thin film transistor element by performing the oxygen plasma treatment.
priorityDate 2020-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 35.