| abstract |
A handle substrate 12 made of a single crystal silicon carbide thin film 11 having a thickness of 1 μm or less, and a heat resistant material with a heat resistance temperature of 1100° C. or higher supporting the single crystal silicon carbide thin film 11 (except for single crystal silicon carbide); , at least one material selected from silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, provided between the single crystal silicon carbide thin film 11 and the handle substrate 12, or Ti , Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta, and a composite substrate provided with an intervening layer 13 having a thickness of 1 μm or less made of at least one metal material selected from W to provide. In the composite substrate of the present invention, it is possible to inexpensively manufacture a nano-carbon film with few defects. |