http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102426915-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2014-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102426915-B1 |
| titleOfInvention | Chemical mechanical polishing composition, chemical mechanical polishing method for a low-k dielectric film and method of preparing semiconductor device |
| abstract | Disclosed are a slurry composition for chemical mechanical polishing, a method for chemical mechanical polishing of a low-k film, and a method for manufacturing a semiconductor device. The disclosed slurry composition for chemical mechanical polishing is a slurry composition for chemical mechanical polishing comprising an abrasive, a polishing control agent, an additive, and a medium, wherein the polishing control agent contains both a hydroxyl group (-OH)-containing component and a carboxyl group (-COOH)-containing component. and a molar ratio (-COOH/-OH) of a carboxyl group (-COOH) to a hydroxyl group (-OH) in the polishing control agent is 0.5 to 1.5, and the pH of the chemical mechanical polishing slurry composition is 2 to 5. |
| priorityDate | 2014-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 80.