| abstract |
forming a fin of the non-planar device on the substrate, the fin comprising a second layer between the first layer and the third layer; replacing the second layer with a dielectric material; and forming a gate stack over a channel region of the fin. a first multi-gate device on a substrate comprising a fin comprising a conductive layer on the dielectric layer, a gate stack disposed on the conductive layer in a channel region of the fin, and a source and drain formed in the fin; and a fin comprising a first conductive layer and a second conductive layer separated by a dielectric layer, a gate stack disposed over the first conductive layer and the second conductive layer in a channel region of the fin, and a source and drain formed in the fin. An apparatus is disclosed that includes a second multi-gate device on a substrate comprising: |