http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102417843-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-162 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-327 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
| filingDate | 2015-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102417843-B1 |
| titleOfInvention | Silicon-containing resist underlayer film forming composition having halogenated sulfonylalkyl group |
| abstract | [Problem] To provide a resist underlayer film capable of forming an excellent resist pattern shape when the upper resist film is exposed to light and developed with an alkali developer or an organic solvent, and a composition for forming the same. [Solutions] A silane comprising a hydrolyzable silane, a hydrolyzate thereof, a hydrolysis condensate thereof, or a combination thereof, wherein the hydrolyzable silane is obtained by formula (1): [In formula (1), R 1 is formula (2): (In formula (2), R 4 represents an optionally substituted alkylene group having 1 to 10 carbon atoms, R 5 represents a sulfonyl group or a sulfonamide group, and R 6 represents a halogen-containing organic group.] A resist underlayer film forming composition for lithography comprising a hydrolyzable silane comprising: R6 in the above formula (2) is a fluorine-containing organic group.R6 in the above formula (2) is a trifluoromethyl group.Resist underlayer film forming composition A resist underlayer film obtained by coating and firing on a semiconductor substrate, further containing an acid as a hydrolysis catalyst, and further containing water. |
| priorityDate | 2014-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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