| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67303 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2020-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102415238-B1 |
| titleOfInvention |
Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and program |
| abstract |
The present invention improves the in-plane film thickness uniformity of a film formed on a substrate. A film is formed on the substrate by performing a predetermined number of cycles of (a) supplying a source gas and an inert gas to the substrate in the processing chamber and (b) supplying a reactive gas to the substrate in the processing chamber asynchronously a predetermined number of times. Including the step, in (a), at least any one of the source gas and the inert gas stored in the first tank is supplied to the substrate from the first supply unit, and at least any of the source gas and the inert gas stored in the second tank is supplied from the second supply unit to the substrate, and the concentration of the source gas in the first tank in a state in which at least any of the source gas and the inert gas is stored in the first tank, at least any of the source gas and the inert gas It is made different from the density|concentration of the source gas in the 2nd tank in the state stored in the 2nd tank. |
| priorityDate |
2019-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |