http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102414049-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
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filingDate 2021-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102414049-B1
titleOfInvention Semiconductor device and method for manufacturing the same
abstract The present invention provides a highly reliable semiconductor device and a method for manufacturing the semiconductor device. In a semiconductor device having a bottom gate structure transistor in which an insulating layer functioning as a channel protective film is formed on an oxide semiconductor film, an insulating layer in contact with the oxide semiconductor film and/or a source electrode layer and a drain electrode layer are formed after formation of an impurity removal treatment to the etching gas Prevents contained elements from remaining as impurities on the surface of the oxide semiconductor film. The impurity concentration on the surface of the oxide semiconductor film is 5×10 18 atoms/cm 3 , preferably 1×10 18 atoms/cm 3 or less.
priorityDate 2011-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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