http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102409021-B1
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-482 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
filingDate | 2021-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2022-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2022-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-102409021-B1 |
titleOfInvention | Systems and methods for uv-based suppression of plasma instability |
abstract | A substrate is positioned within a plasma processing chamber exposed to a plasma generating region. A first plasma is generated in the plasma generating region. The first plasma is configured to cause deposition of a film on the substrate until the film deposited on the substrate reaches a threshold film thickness. The substrate is then exposed to UV radiation to correct defects in the film deposited on the substrate. The UV radiation may be supplied in situ using a UV radiation device disposed to expose to a second plasma or plasma generating region configured to generate UV radiation. UV radiation can also be supplied ex situ by moving the substrate from the plasma processing chamber to a separate UV radiation device. As the film thickness increases, the substrate can be exposed to UV radiation in a repeated manner to address defects in the deposited film. |
priorityDate | 2016-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.