http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102406803-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 |
| filingDate | 2017-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102406803-B1 |
| titleOfInvention | Semiconductor device and semiconductor device package including the same |
| abstract | In an embodiment, a first conductivity-type semiconductor layer including aluminum, a second conductivity-type semiconductor layer including aluminum, and aluminum and disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer a light emitting structure including an active layer, wherein secondary ions including aluminum are emitted from the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer when the light emitting structure is irradiated with primary ions, the The secondary ionic strength of the second conductivity type semiconductor layer has a first maximum strength and a first minimum strength, and the secondary ionic strength of the first conductivity type semiconductor layer has a second minimum strength different from the first minimum strength, , the second conductivity type semiconductor layer has a first intermediate intensity of the secondary ions within a first distance from the surface of the second conductivity type semiconductor layer, and the first intermediate intensity corresponds to the second minimum intensity, and , wherein the first intermediate intensity is between a first minimum intensity and a first maximum intensity, the first maximum intensity is within a second distance from the first distance, and the second distance W1 and the first distance The ratio of (W2) is 1:0.2 to 1:1. Disclosed are a semiconductor device and a semiconductor device package including the same. |
| priorityDate | 2016-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.