http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102405669-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate | 2020-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102405669-B1 |
| titleOfInvention | Growth inhibitor for forming thin film, method for forming thin film and semiconductor substrate prepared therefrom |
| abstract | The present invention relates to a growth inhibitor for thin film formation, a thin film formation method using the same, and a semiconductor substrate prepared therefrom, and more particularly, to the following Chemical Formula 1 [Formula 1] AnBmXoYiZj (The A is carbon or silicon, B is hydrogen or alkyl having 1 to 3 carbon atoms, X is halogen, and Y and Z are independently selected from the group consisting of oxygen, nitrogen, sulfur and fluorine. or more and not equal to each other, wherein n is an integer of 2 to 15, o is an integer of 1 or more, m is 0 to 2n-1, wherein i and j are integers from 0 to 3, and An is a double It relates to a growth inhibitor for thin film formation, which is a compound represented by at least one bond or triple bond), a growth inhibitor for thin film formation, a method for forming a thin film using the same, and a semiconductor substrate manufactured therefrom. According to the present invention, by suppressing side reactions to reduce the growth rate of the thin film and to remove process by-products in the thin film, even when forming a thin film on a substrate having a complex structure, step coverage and thickness uniformity of the thin film are greatly improved It is effective to provide a growth inhibitor for thin film formation, a thin film formation method using the same, and a semiconductor substrate manufactured therefrom. |
| priorityDate | 2020-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 88.