| abstract |
A semiconductor device comprising: a substrate having an active region; and first to third transistors provided in the active region of the substrate, wherein each of the first to third transistors comprises a dielectric layer on the substrate, on the dielectric layer a metal layer disposed thereon, and a barrier layer disposed between the dielectric layer and the metal layer, wherein each of the first and second transistors further comprises a work function layer provided between the dielectric layer and the barrier layer, the first The barrier layer of the third transistor may be in direct contact with the dielectric layer, and a threshold voltage of the second transistor may be higher than a threshold voltage of the first transistor and lower than a threshold voltage of the third transistor. |