| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 |
| filingDate |
2019-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102402911-B1 |
| titleOfInvention |
Pattern formation method and material for manufacturing semiconductor devices |
| abstract |
In the pattern forming method, a lower layer is formed over a base layer. An intermediate layer is formed over the lower layer. A resist pattern is formed over the intermediate layer. The intermediate layer is patterned by using the resist pattern as an etching mask. The underlying layer is patterned by using a patterned intermediate layer. The basal layer is patterned. The intermediate layer contains at least 50 wt % of silicon and organic materials. In one or more of the foregoing embodiments and the following embodiments, an annealing operation is further performed after the intermediate layer is formed. |
| priorityDate |
2018-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |