| abstract |
A semiconductor device according to an embodiment of the present invention includes a substrate including a first region and a second region, first gate structures disposed at a first interval in the first region, and second gate structures disposed at a second interval in the second region. 2 gate structures, a first spacer disposed on sidewalls of the first gate structures, an insulating layer disposed on the first spacer, a second spacer disposed on sidewalls of the second gate structures, and a third spacer disposed on the second spacer including spacers. A sum of the thickness of the first spacer on the sidewall of the first gate structure and the thickness of the insulating layer may be substantially equal to the sum of the thickness of the second spacer and the thickness of the third spacer on the sidewall of the second gate structure. |