| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-775 |
| filingDate |
2015-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102386525-B1 |
| titleOfInvention |
Carbon-based interface to epitaxially grown source/drain transistor regions |
| abstract |
Techniques are disclosed for forming p-MOS transistors having one or more carbon-based interfacial layers between epitaxially grown S/D regions and a channel region. In some cases, the carbon-based interfacial layer(s) may comprise a single layer having a carbon content greater than 20% carbon and a thickness of 0.5-8 nm. In some cases, the carbon-based interfacial layer(s) may comprise a single layer having a carbon content of less than 5% and a thickness of 2-10 nm. In some such cases, the single layer may include boron-doped silicon (Si:B) or boron-doped silicon germanium (SiGe:B). In some cases, one or more additional interfacial layers may be deposited on the carbon-based interfacial layer(s), wherein the additional interfacial layer(s) comprises Si:B and/or SiGe:B. These techniques can be used to improve the short channel effect and improve the effective gate length of the resulting transistor. |
| priorityDate |
2015-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |