http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102384583-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2014-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102384583-B1 |
| titleOfInvention | Slurry composition for chemical mechanical polishing and method for manufacturing semiconductor device by using the same |
| abstract | Disclosed are a slurry composition for chemical mechanical polishing and a method for manufacturing a semiconductor device using the same. The disclosed slurry composition for chemical mechanical polishing is a chemical mechanical polishing slurry composition according to an embodiment of the present invention, a compound (B) having a skeleton derived from cerium oxide (A), a monosaccharide, and a compound including a carboxyl group and a hydroxyl group ( C), the compound (D) containing an amino group, and the solvent (E) are included, and the pH is in the range of 3 to 6.5. The chemical mechanical polishing slurry composition has a high polishing rate for a silicon oxide film and a low polishing rate for a silicon nitride film, and exhibits excellent polishing selectivity and excellent dispersion stability. |
| priorityDate | 2014-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 136.