| abstract |
A method of fabricating a semiconductor device comprising an activated p-(Al,In)GaN layer is a method for fabricating a p-(Al,In)GaN layer with H₂ and/or NH₃ under conditions that passivate the p-(Al,In)GaN layer. exposure to a gaseous composition of The method does not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The method can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions that can be integrated into electronic devices. |