http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102378930-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02249 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102378930-B1 |
| titleOfInvention | Etchant composition for etching nitride layer and method of forming pattern using the same |
| abstract | The nitride layer etching composition of the present invention includes phosphoric acid, a silane ammonium-based compound in which two or more ammonium groups are bonded per one silicon (Si) atom, and excess water. The nitride layer can be etched with a high selectivity by using the nitride layer etching composition without damage to the oxide layer and re-adsorption of etch residues. |
| priorityDate | 2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.