| abstract |
applying a dielectric film stack 120 over a workpiece, and thereafter applying a photoresist 140 over the film stack, comprising trenches 110 and 186 and vias 202 . A conductive interconnect is formed in the workpiece 100 . Trenches 142 in photoresist are patterned, wherein the trenches are made up of segments disposed end-to-end with respect to each other. The segments are longitudinally spaced apart from each other at the locations where the vias 202 will be located. The trenches are etched into the dielectric film stack and then filled with a conductive material to form metal line segments 186 . Vias 192 are patterned in the gaps separating adjacent ends of longitudinally-related lines 186 . The patterned vias are etched and then filled with a conductive material, and the ends of adjacent line segments 186 serve to accurately position the vias in a direction along the lengths of the trenches. |