| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate |
2018-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102376835-B1 |
| titleOfInvention |
Semiconductor device manufacturing method, substrate processing apparatus and program |
| abstract |
It is possible to reduce the factor inhibiting the film formation of the metal film. A metal-containing gas and a reducing gas containing silicon and hydrogen and containing no halogen are simultaneously supplied to the substrate, and the pressure in the processing chamber while supplying at least the reducing gas is 130 Pa or more and less than 3990 Pa. a first step of setting the values within the range; a second step of removing the metal-containing gas and the reducing gas remaining in the processing chamber; a third step of supplying a nitrogen-containing gas to the substrate; A fourth process of removing the remaining nitrogen-containing gas is sequentially repeated to form a metal nitride film substantially free of silicon atoms on the substrate. |
| priorityDate |
2017-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |