| abstract |
In some embodiments, the semiconductor surface can be effectively passivated, preferably by nitridation with hydrazine, a hydrazine derivative, or a combination thereof. The surface may be a semiconductor surface of the transistor channel region. In some embodiments, native oxide is removed from the semiconductor surface, and the surface is subsequently nitrided. In some other embodiments, a semiconductor surface oxide layer is formed on the semiconductor surface, and the passivation is achieved by forming a semiconductor oxynitride layer on the surface, wherein the nitriding is applied to the surface oxide to form the oxynitride layer. contributes to nitrogen; The semiconductor oxide layer may be deposited by atomic layer deposition (ALD), and the nitridation may also be performed as part of the ALD. |