http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102373917-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
filingDate 2014-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102373917-B1
titleOfInvention Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
abstract A method of forming a film on a patterned surface of a substrate by an atomic layer deposition (ALD) process, the method comprising: adsorbing a first precursor containing intramolecular silicon or metal to the patterned surface; adsorbing a second precursor that does not contain intramolecular silicon or metal on the first precursor adsorbed surface; exposing the second precursor adsorbed surface to an excited reactant to oxidize, nitridize or carbonize the adsorbed precursors to the surface of the substrate; and repeating the above cycle to form a film on the patterned surface of the substrate.
priorityDate 2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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