http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102372023-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 |
| filingDate | 2017-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102372023-B1 |
| titleOfInvention | Semiconductor device |
| abstract | An embodiment includes a substrate; and a semiconductor structure disposed on the substrate, wherein the semiconductor structure includes: a first conductivity-type semiconductor layer; a second conductivity type semiconductor layer; and a first electrode disposed on the first conductivity-type semiconductor layer and electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer, disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer Disclosed is a semiconductor device in which the ratio of the outer length of the upper surface of the light absorption layer to the area of the upper surface of the light absorption layer is 1.2 to 1.5. |
| priorityDate | 2017-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.