| abstract |
A thin film transistor using an oxide semiconductor WHEREIN: Let it be one of the subject to improve the field effect mobility. Moreover, even if it improves the field effect mobility of a thin film transistor, it makes it one of the subject to suppress the increase of an off-state current. In a thin film transistor using an oxide semiconductor layer, between the oxide semiconductor layer and the gate insulating layer, a semiconductor layer having a higher electrical conductivity than the oxide semiconductor layer and a thin film thickness is formed to improve the field effect mobility of the thin film transistor Therefore, it is possible to suppress an increase in the off current. |