http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102356402-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2014-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102356402-B1 |
| titleOfInvention | Semiconductor device and method for manufacturing semiconductor device |
| abstract | The present invention provides a method of manufacturing a semiconductor device for controlling a threshold voltage. A semiconductor device having a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trapping layer provided between the gate electrode and the first semiconductor, wherein a heat treatment of 125°C or more and 450°C or less is performed. During the process, the potential of the gate electrode is maintained higher than the potential of the electrode for 1 second or longer, and the threshold voltage is increased than before the heat treatment. |
| priorityDate | 2013-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 77.