| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3284
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-79 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-453
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-453
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-64 |
| filingDate |
2015-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102353563-B1 |
| titleOfInvention |
Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target |
| abstract |
This invention provides the oxide sintered compact which can obtain a low carrier concentration and high carrier mobility when it is set as an oxide semiconductor thin film by sputtering method, and the target for sputtering using the same. This oxide sintered compact contains indium, gallium, and zinc as oxides. The content of gallium is 0.08 or more and less than 0.20 in terms of Ga/(In+Ga) atomic ratio, and the content of zinc is 0.0001 or more and less than 0.08 in Zn/(In+Ga+Zn) atomic ratio. The crystalline oxide semiconductor thin film in which this oxide sintered compact was formed as a target for sputtering has a carrier concentration of 8.0x10 17 cm -3 or less, and can obtain a carrier mobility of 10 cm<2>/V*s or more. |
| priorityDate |
2014-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |