| abstract |
This invention provides the oxide sintered compact which can obtain a low carrier concentration and high carrier mobility when it is set as an oxide semiconductor thin film by sputtering method, and the target for sputtering using the same. The oxide sintered body contains indium, gallium and zinc as oxides. The gallium content is 0.20 or more and 0.49 or less in Ga/(In+Ga) atomic ratio, and the zinc content is 0.0001 or more and less than 0.08 in Zn/(In+Ga+Zn) atomic ratio. The amorphous oxide semiconductor thin film in which this oxide sintered body was formed as a target for sputtering has a carrier concentration of 4.0×10 18 cm -3 or less, and a carrier mobility of 10 cm 2 /V·s or more can be obtained. |