| abstract |
A semiconductor device includes: a plurality of channels sequentially stacked on the substrate to be spaced apart from each other in a vertical direction perpendicular to a top surface of the substrate; a gate structure formed on the substrate to surround at least a partial surface of each channel; A first spacer covering at least a portion of a sidewall of the structure, the first spacer including a central portion overlapping the channel in the vertical direction and a protrusion protruding from the central portion and not overlapping the channel in the vertical direction, and formed on the substrate , a source/drain layer connected to the sidewalls of the channels. |