| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67103 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2019-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102352038-B1 |
| titleOfInvention |
Silicon oxide etching method and etching apparatus |
| abstract |
An object of the present invention is to provide a method capable of etching silicon oxide at a sufficient rate even at a low temperature of 200° C. or less without using plasma and without generating a residue. The present invention is a silicon oxide characterized in that gaseous hydrogen fluoride, gaseous organic amine compound, and/or gaseous organic amine compound hydrogen fluoride salt is reacted with silicon oxide without plasma state. dry etching method. |
| priorityDate |
2018-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |