| abstract |
[Problem] Not only in air but also under the conditions of film formation in inert gas, no by-products are generated, heat resistance, and excellent embedding and planarization characteristics of patterns formed on the substrate, as well as dry etching during substrate processing A compound capable of forming an organic underlayer film having good resistance is also provided. [Solutions] A compound represented by the following general formula (1-1). (Wherein, AR1 and AR2 represent an aromatic ring or an aromatic ring containing at least one of a nitrogen atom and a sulfur atom, and two AR1, AR1 and AR2, or two AR2 may be connected. AR3 is a benzene ring; A naphthalene ring, a thiophene ring, a pyridine ring or a diazine ring A is an organic group, B is an anionic leaving group, Y is a divalent organic group, p is 1 or 2, q is 1 or 2, r is 0 or 1 , s is 2 to 4. When s = 2, Z is a single bond, a divalent atom or a divalent organic group, and when s = 3 or 4, Z is a trivalent or tetravalent, atom or organic group .) |